Research
Samir Y. Garzon
Research Assistant Professor
Department of Physics & Astronmy
and USC Nanocenter
University of South Carolina

General Information Research Curriculum Vitae Personal Links

MMM 2008 Invited Talk

Coherent nanomagnet control via ultrashort spin torque pulses (pdf)



Publications

Macrospin model of incubation delay due to the field-like spin transfer torque

Submitted

cond-mat: arXiv:0810.3421

Direction-controlled Growth and Characterization of Indium Nitride Nanowires

MRS 2009 Proceedings

Submitted

Alkanethiol induced changes in the magnetotransport properties of Co/Au bilayers

MMM 2008 Proceedings

Accepted

Coherent control of nanomagnet dynamics via ultrafast spin torque pulses (Featured in Physics 1, 33 (2008))

Phys. Rev. B 78, 180401 (2008)

cond-mat: arXiv:0806.2297

Synthesis and Properties of High-Quality InN Nanowires and Nano-networks

J. Elect. Mat. 37, 585 (2008)


Enhanced Spin Dependent Shot Noise in Magnetic Tunnel Barriers

Physica E (2007)

cond-mat: arXiv:0701458

Temperature-Dependent Asymmetry of the Nonlocal Spin-Injection Resistance: Evidence for Spin Nonconserving Interface Scattering

Phys. Rev. Lett. 94, 176601 (2005)

cond-mat: arXiv:0504201



PhD Dissertation

Spin Injection and detection in copper spin valve structures

Dissertation defense slides (ppt)

 

PhD research

 

My PhD work was on spin injection and detection in spin valve structures using both transport measurements and magnetic force microscopy. I fabricated mesoscopic scale structures like the ones shown in the left by using standard electron beam lithography, lift-off, and metal deposition techniques, on an Si-SiO2 substrate. This particular sample shows two Cobalt electrodes of different length connected with a thin vertical Copper line and four additional probing contacts. By applying an external field parallel to the ferromagnetic (Cobalt) electrodes, their magnetization state can be independently controlled (due to their difference in shape anisotropy).

A schematic representation of the above device is shown in the right. A typical transport experiment consists of injecting a current between T1 and N1 as shown (grounding N1) and measuring the voltage between terminals T2 and N2 with a high input impedance device. Our measurements are "nonlocal" in the sense that there is no charge current between F1 and F2, so the voltage is due completely to electron spin diffusion (a spin current). The measured voltage depends on the magnetization states of the ferromagnetic electrodes: due to the current perpendicular to plane (CPP) magnetoresistance effect, the electrons can diffuse more easily between injector (F1) and detector (F2) when their magnetization states are parallel than when they are anti-parallel. The measured voltage also decreases (in magnitude) as  the separation between injector and detector increases due to spin relaxation, hence by measuring samples with varying lengths L it is possible to extract the spin relaxation length l of electrons in the nonmagnetic material (N, in our case Copper).

The figure on the left shows the typical parallel magnetic field dependence of the nonlocal resistance, defined as the ratio of the measured voltage to the applied current, at 4.2 K. The symmetry between parallel and anti-parallel magnetizations of the ferromagnets is clear.

If the magnetic field is applied perpendicular to the plane, the spin of the electrons precesses as they diffuse between injector and detector producing the typical bell shaped curve of the Hanle effect. From a single Hanle effect measurement it is possible to extract the spin relaxation length and the product of the "spin polarizations" (not exactly...) of the injector and detector.

 

At higher temperatures the symmetry between the values of the nonlocal resistance for aligned and anti-aligned magnetization of injector and detector disappears and there is an additional nonlinear offset which is also due to spin and which we believe appears due to the difference of interfacial spin flip scattering of majority and minority carriers at the detector. For more details please see any of the following resources: